Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer
High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination for thin layers, which epitaxial ones generally are....
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2004-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/432 |