Active Radiation-Hardening Strategy in Bulk FinFETs

Active Radiation-Hardening Strategy in Bulk FinFETs

In this article, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that drives the charge generated by the ion track out o...

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Bibliographic Details
Main Authors: Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gamiz
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Charge collection
single event cross section
radiation hardening
soft error
single event transient (SET)
single event upset (SEU)
Online Access:https://ieeexplore.ieee.org/document/9249242/

Internet

https://ieeexplore.ieee.org/document/9249242/

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