Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering

A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative devi...

Full description

Bibliographic Details
Main Authors:	Vetrova Natalia, Ivanov Yury, Kuimov Evgeny, Makeev Mstislav, Meshkov Sergey, Pchelintsev Kirill, Shashurin Vasily
Format:	Article
Language:	English
Published:	EDP Sciences 2019-01-01
Series:	ITM Web of Conferences
Online Access:	https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08004.pdf

id	doaj-356fd6ce25864738b31b5dbbb1433002
record_format	Article
spelling	doaj-356fd6ce25864738b31b5dbbb14330022021-03-02T07:43:13ZengEDP SciencesITM Web of Conferences2271-20972019-01-01300800410.1051/itmconf/20193008004itmconf_crimico2019_08004Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scatteringVetrova Natalia0Ivanov Yury1Kuimov Evgeny2Makeev Mstislav3Meshkov Sergey4Pchelintsev Kirill5Shashurin Vasily6Department of Radioelectronics and Laser Technologies, Bauman Moscow State Technical University (National Technological University)Department of Radioelectronics and Laser Technologies, Bauman Moscow State Technical University (National Technological University)Department of Radioelectronics and Laser Technologies, Bauman Moscow State Technical University (National Technological University)Department of Radioelectronics and Laser Technologies, Bauman Moscow State Technical University (National Technological University)Department of Radioelectronics and Laser Technologies, Bauman Moscow State Technical University (National Technological University)Department of Radioelectronics and Laser Technologies, Bauman Moscow State Technical University (National Technological University)Department of Radioelectronics and Laser Technologies, Bauman Moscow State Technical University (National Technological University)A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the current- voltage characteristic of the resonant tunnel diodes on AlGaAs- heterostructures is less than 3%.https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08004.pdf
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Vetrova Natalia Ivanov Yury Kuimov Evgeny Makeev Mstislav Meshkov Sergey Pchelintsev Kirill Shashurin Vasily
spellingShingle	Vetrova Natalia Ivanov Yury Kuimov Evgeny Makeev Mstislav Meshkov Sergey Pchelintsev Kirill Shashurin Vasily Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering ITM Web of Conferences
author_facet	Vetrova Natalia Ivanov Yury Kuimov Evgeny Makeev Mstislav Meshkov Sergey Pchelintsev Kirill Shashurin Vasily
author_sort	Vetrova Natalia
title	Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering
title_short	Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering
title_full	Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering
title_fullStr	Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering
title_full_unstemmed	Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering
title_sort	prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering
publisher	EDP Sciences
series	ITM Web of Conferences
issn	2271-2097
publishDate	2019-01-01
description	A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the current- voltage characteristic of the resonant tunnel diodes on AlGaAs- heterostructures is less than 3%.
url	https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08004.pdf
work_keys_str_mv	AT vetrovanatalia predictionoftheelectricalcharacteristicsofheterostructuralmicrowavedeviceswithtransversecurrenttransferbasedonaquantummechanicalselfconsistentmodelofananoscalechannelwithtakingintoaccountintervalleyscattering AT ivanovyury predictionoftheelectricalcharacteristicsofheterostructuralmicrowavedeviceswithtransversecurrenttransferbasedonaquantummechanicalselfconsistentmodelofananoscalechannelwithtakingintoaccountintervalleyscattering AT kuimovevgeny predictionoftheelectricalcharacteristicsofheterostructuralmicrowavedeviceswithtransversecurrenttransferbasedonaquantummechanicalselfconsistentmodelofananoscalechannelwithtakingintoaccountintervalleyscattering AT makeevmstislav predictionoftheelectricalcharacteristicsofheterostructuralmicrowavedeviceswithtransversecurrenttransferbasedonaquantummechanicalselfconsistentmodelofananoscalechannelwithtakingintoaccountintervalleyscattering AT meshkovsergey predictionoftheelectricalcharacteristicsofheterostructuralmicrowavedeviceswithtransversecurrenttransferbasedonaquantummechanicalselfconsistentmodelofananoscalechannelwithtakingintoaccountintervalleyscattering AT pchelintsevkirill predictionoftheelectricalcharacteristicsofheterostructuralmicrowavedeviceswithtransversecurrenttransferbasedonaquantummechanicalselfconsistentmodelofananoscalechannelwithtakingintoaccountintervalleyscattering AT shashurinvasily predictionoftheelectricalcharacteristicsofheterostructuralmicrowavedeviceswithtransversecurrenttransferbasedonaquantummechanicalselfconsistentmodelofananoscalechannelwithtakingintoaccountintervalleyscattering
_version_	1724241064391344128

Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering

Similar Items