Temperature-dependent growth of hexagonal and monoclinic gallium sulfide films by pulsed-laser deposition
We demonstrate the selective, pulsed-laser deposition of hexagonal GaS and monoclinic Ga2S3 films on sapphire substrates from a single Ga2S3 target in high-vacuum conditions. Growth at substrate temperatures below 550 °C causes GaS film formation, which indicates non-stoichiometric transfer from the...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0021938 |