Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

Electronic defects in crystalline silicon induced by hydrogen plasma treatments are studied, based on in-situ photocurrent measurements and real-time spectroscopic ellipsometry. The electronic defects are generated by the plasma treatments, and annihilated partially by postannealing. The generation...

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Main Authors:	Shota Nunomura, Isao Sakata, Koji Matsubara
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-04-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5089202

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record_format	Article
spelling	doaj-3351b4d96b9f46f7a8fa3bec58a2386a2020-11-24T22:15:49ZengAIP Publishing LLCAIP Advances2158-32262019-04-0194045110045110-510.1063/1.5089202030904ADVFormation of electronic defects in crystalline silicon during hydrogen plasma treatmentShota Nunomura0Isao Sakata1Koji Matsubara2Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JapanResearch Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JapanResearch Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JapanElectronic defects in crystalline silicon induced by hydrogen plasma treatments are studied, based on in-situ photocurrent measurements and real-time spectroscopic ellipsometry. The electronic defects are generated by the plasma treatments, and annihilated partially by postannealing. The generation and annihilation of defects strongly depends on both the treatment time and the annealing temperature. A long-time plasma treatment results in the formation of the residual defects in the silicon bulk. The density of these defects is estimated to be of the order of 1013 cm−2. Interestingly, the electronic defects are formed even before a strong modification of the surface structure, i.e., the formation of a nanometer-scale disordered surface layer.http://dx.doi.org/10.1063/1.5089202
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Shota Nunomura Isao Sakata Koji Matsubara
spellingShingle	Shota Nunomura Isao Sakata Koji Matsubara Formation of electronic defects in crystalline silicon during hydrogen plasma treatment AIP Advances
author_facet	Shota Nunomura Isao Sakata Koji Matsubara
author_sort	Shota Nunomura
title	Formation of electronic defects in crystalline silicon during hydrogen plasma treatment
title_short	Formation of electronic defects in crystalline silicon during hydrogen plasma treatment
title_full	Formation of electronic defects in crystalline silicon during hydrogen plasma treatment
title_fullStr	Formation of electronic defects in crystalline silicon during hydrogen plasma treatment
title_full_unstemmed	Formation of electronic defects in crystalline silicon during hydrogen plasma treatment
title_sort	formation of electronic defects in crystalline silicon during hydrogen plasma treatment
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2019-04-01
description	Electronic defects in crystalline silicon induced by hydrogen plasma treatments are studied, based on in-situ photocurrent measurements and real-time spectroscopic ellipsometry. The electronic defects are generated by the plasma treatments, and annihilated partially by postannealing. The generation and annihilation of defects strongly depends on both the treatment time and the annealing temperature. A long-time plasma treatment results in the formation of the residual defects in the silicon bulk. The density of these defects is estimated to be of the order of 1013 cm−2. Interestingly, the electronic defects are formed even before a strong modification of the surface structure, i.e., the formation of a nanometer-scale disordered surface layer.
url	http://dx.doi.org/10.1063/1.5089202
work_keys_str_mv	AT shotanunomura formationofelectronicdefectsincrystallinesiliconduringhydrogenplasmatreatment AT isaosakata formationofelectronicdefectsincrystallinesiliconduringhydrogenplasmatreatment AT kojimatsubara formationofelectronicdefectsincrystallinesiliconduringhydrogenplasmatreatment
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Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

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