Formation of electronic defects in crystalline silicon during hydrogen plasma treatment
Electronic defects in crystalline silicon induced by hydrogen plasma treatments are studied, based on in-situ photocurrent measurements and real-time spectroscopic ellipsometry. The electronic defects are generated by the plasma treatments, and annihilated partially by postannealing. The generation...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5089202 |