On the Study of Dislocation Density in MBE GaSb-Based Structures

On the Study of Dislocation Density in MBE GaSb-Based Structures

The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by applying interfacial misfit array (IMF) and complex structures) deposited using molecular beam epitaxy are presented. Three measurement techniques...

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Bibliographic Details
Main Authors: Agata Jasik, Dariusz Smoczyński, Iwona Sankowska, Andrzej Wawro, Jacek Ratajczak, Krzysztof Czuba, Paweł Kozłowski
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Crystals
Subjects:
dislocation density
GaSb
MBE
HRXRD
EPD
AFM
Online Access:https://www.mdpi.com/2073-4352/10/12/1074

Internet

https://www.mdpi.com/2073-4352/10/12/1074

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