SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 mi...

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Bibliographic Details
Main Authors:	Hyun-Seop Kim, Kwang-Seok Seo, Jungwoo Oh, Ho-Young Cha
Format:	Article
Language:	English
Published:	Elsevier 2018-09-01
Series:	Results in Physics
Online Access:	http://www.sciencedirect.com/science/article/pii/S2211379718309975

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