SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 mi...

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Main Authors: Hyun-Seop Kim, Kwang-Seok Seo, Jungwoo Oh, Ho-Young Cha
Format: Article
Language:English
Published: Elsevier 2018-09-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379718309975
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spelling doaj-3254bd2377704fa0a6acd58b88a791062020-11-24T20:49:47ZengElsevierResults in Physics2211-37972018-09-0110248249SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistorsHyun-Seop Kim0Kwang-Seok Seo1Jungwoo Oh2Ho-Young Cha3School of Electrical and Electronic Engineering, Hongik University, Seoul 04066, Republic of KoreaDepartment of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of KoreaSchool of Integrated Technology, Yonsei University, Incheon 21983, Republic of KoreaSchool of Electrical and Electronic Engineering, Hongik University, Seoul 04066, Republic of Korea; Corresponding author.In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.http://www.sciencedirect.com/science/article/pii/S2211379718309975
collection DOAJ
language English
format Article
sources DOAJ
author Hyun-Seop Kim
Kwang-Seok Seo
Jungwoo Oh
Ho-Young Cha
spellingShingle Hyun-Seop Kim
Kwang-Seok Seo
Jungwoo Oh
Ho-Young Cha
SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
Results in Physics
author_facet Hyun-Seop Kim
Kwang-Seok Seo
Jungwoo Oh
Ho-Young Cha
author_sort Hyun-Seop Kim
title SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
title_short SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
title_full SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
title_fullStr SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
title_full_unstemmed SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
title_sort sf6 plasma treatment for leakage current reduction of algan/gan heterojunction field-effect transistors
publisher Elsevier
series Results in Physics
issn 2211-3797
publishDate 2018-09-01
description In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.
url http://www.sciencedirect.com/science/article/pii/S2211379718309975
work_keys_str_mv AT hyunseopkim sf6plasmatreatmentforleakagecurrentreductionofalganganheterojunctionfieldeffecttransistors
AT kwangseokseo sf6plasmatreatmentforleakagecurrentreductionofalganganheterojunctionfieldeffecttransistors
AT jungwoooh sf6plasmatreatmentforleakagecurrentreductionofalganganheterojunctionfieldeffecttransistors
AT hoyoungcha sf6plasmatreatmentforleakagecurrentreductionofalganganheterojunctionfieldeffecttransistors
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