SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 mi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2018-09-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718309975 |
| Summary: | In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces. |
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| ISSN: | 2211-3797 |