THE IMPACT OF THE METHOD OF UNDERLAY SURFACE PROCESSING ON THE DEVELOPMENT OF DEFECTS IN EPITAXIAL COMPOSITIONS IN THE COURSE OF SILICON PHOTO-TRANSDUCERS PRODUCTION

• Main Authors: Zoya Nikonova, Oksana Nyebesnyuk, Alina Nikonova, Stanislav Ivanchikov, Alexander Zahoda
• Format: Article
• Language: English
• Published: Kherson National Technical University 2017-06-01
• Series: Biomedicinskaâ Inženeriâ i Èlektronika
• Subjects: epitaxial compositions; inverted silicon structures; swirl-defects; defects; dislocations
• Online Access: http://biofbe.esrae.ru/pdf/2017/3/1112.pdf
• ISSN: 2311-1100; 2311-1100

For the production of silicon photo-transducers (PhT) the acquisition of epitaxial compositions (EC) with high resistivity of working layer. One of the main parameters characterizing the quality of EC is the density of dislocation and other structural defects. Great impact on the development of defects during epitaxial growth is produced by the quality of underlay preparation before that. Multiple research of relatively thin (less than 20-30 microns) epitaxial layers demonstrated, that contamination or damages of underlay surface cause the development of defects of wrapping, counterparts, macroscopic protuberances in the growing layer. During inverted epitaxy there are no high requirements as for structural perfection of epitaxial layer as far as in PhT, produced on the basis of EC for which inverted silicon structures (ISS) serve with the working layer of mono-crystal substrate. Therefore in inverted epitaxy it is the problem of the development in the course of defects growth not in epitaxial layer, but in underlay, that becomes the major one. The processes of the development of defects in underlay in the course of growing thick (approximately 300 microns) epitaxial layer are scarcely researched by now. Scientists sustained the idea that when using dislocation-free underlays for growing in the working layer of ISS there are dislocations with the density of 103 sm-2 and more. Thus, investigation of the factors that determine the development of dislocations in underlay in the process of epitaxy, has now gained great practical value.