THE IMPACT OF THE METHOD OF UNDERLAY SURFACE PROCESSING ON THE DEVELOPMENT OF DEFECTS IN EPITAXIAL COMPOSITIONS IN THE COURSE OF SILICON PHOTO-TRANSDUCERS PRODUCTION
For the production of silicon photo-transducers (PhT) the acquisition of epitaxial compositions (EC) with high resistivity of working layer. One of the main parameters characterizing the quality of EC is the density of dislocation and other structural defects. Great impact on the development of defe...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Kherson National Technical University
2017-06-01
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| Series: | Biomedicinskaâ Inženeriâ i Èlektronika |
| Subjects: | |
| Online Access: | http://biofbe.esrae.ru/pdf/2017/3/1112.pdf |