Inverse Scattering Method Design of Regrowth-Free Single-Mode Semiconductor Lasers Using Pit Perturbations for Monolithic Integration

Inverse Scattering Method Design of Regrowth-Free Single-Mode Semiconductor Lasers Using Pit Perturbations for Monolithic Integration

An inverse scattering method is used to design regrowth-free single-mode lasers, using etch depth insensitive pits as perturbations in the laser cavity. These pit perturbations are circular holes etched into the waveguide of each laser to a depth 0.8 μm below the quantum wells in the lase...

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Bibliographic Details
Main Authors: Kevin Shortiss, Mohamad Dernaika, Ludovic Caro, Masoud Seifikar, Frank H. Peters
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Semiconductor lasers
photonic integrated circuits
Online Access:https://ieeexplore.ieee.org/document/8477050/

Internet

https://ieeexplore.ieee.org/document/8477050/

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