THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING

THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING

The paper presents the results of a study of thin-film transistors based on the InGaZnO semiconductor compound (IGZO) for active-matrix displays addressing formed by magnetron plasma-chemical deposition. Their structural-morphological and electrophysical properties are investigated. Carrier mobility...

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Main Authors: B. A. Kazarkin, A. A. Stepanov, Y. U. Mukha, I. I. Zakharchenia, Y. A. Khakhlou, A. G. Smirnov
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-12-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
indium-gallium-zinc oxide
transparent conducting layers
display technology
Online Access:https://doklady.bsuir.by/jour/article/view/2158
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spelling doaj-318273fd5ac74561b6f46b69ddb3a3b32021-07-28T16:19:57ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-12-0107 (125)10110610.35596/1729-7648-2019-125-7-101-1061348THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSINGB. A. Kazarkin0A. A. Stepanov1Y. U. Mukha2I. I. Zakharchenia3Y. A. Khakhlou4A. G. Smirnov5Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsIZOVAC GroupBelarusian State University of Informatics and RadioelectronicsThe paper presents the results of a study of thin-film transistors based on the InGaZnO semiconductor compound (IGZO) for active-matrix displays addressing formed by magnetron plasma-chemical deposition. Their structural-morphological and electrophysical properties are investigated. Carrier mobility is analyzed using the Hall method. The effect of annealing in vacuum, an oxygen atmosphere, and a nitrogen atmosphere on the grain size of an IGZO film was investigated. The resulting layers are characterized by high mobility of charge carriers, which allows their use in the manufacture of new-generation LCD and OLED displays.https://doklady.bsuir.by/jour/article/view/2158indium-gallium-zinc oxidetransparent conducting layersdisplay technology
collection DOAJ
language Russian
format Article
sources DOAJ
author B. A. Kazarkin
A. A. Stepanov
Y. U. Mukha
I. I. Zakharchenia
Y. A. Khakhlou
A. G. Smirnov
spellingShingle B. A. Kazarkin
A. A. Stepanov
Y. U. Mukha
I. I. Zakharchenia
Y. A. Khakhlou
A. G. Smirnov
THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
indium-gallium-zinc oxide
transparent conducting layers
display technology
author_facet B. A. Kazarkin
A. A. Stepanov
Y. U. Mukha
I. I. Zakharchenia
Y. A. Khakhlou
A. G. Smirnov
author_sort B. A. Kazarkin
title THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING
title_short THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING
title_full THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING
title_fullStr THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING
title_full_unstemmed THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING
title_sort thin film transistors with ingazno-semiconductor layer for active matrix addressing
publisher Educational institution «Belarusian State University of Informatics and Radioelectronics»
series Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn 1729-7648
publishDate 2019-12-01
description The paper presents the results of a study of thin-film transistors based on the InGaZnO semiconductor compound (IGZO) for active-matrix displays addressing formed by magnetron plasma-chemical deposition. Their structural-morphological and electrophysical properties are investigated. Carrier mobility is analyzed using the Hall method. The effect of annealing in vacuum, an oxygen atmosphere, and a nitrogen atmosphere on the grain size of an IGZO film was investigated. The resulting layers are characterized by high mobility of charge carriers, which allows their use in the manufacture of new-generation LCD and OLED displays.
topic indium-gallium-zinc oxide
transparent conducting layers
display technology
url https://doklady.bsuir.by/jour/article/view/2158
work_keys_str_mv AT bakazarkin thinfilmtransistorswithingaznosemiconductorlayerforactivematrixaddressing
AT aastepanov thinfilmtransistorswithingaznosemiconductorlayerforactivematrixaddressing
AT yumukha thinfilmtransistorswithingaznosemiconductorlayerforactivematrixaddressing
AT iizakharchenia thinfilmtransistorswithingaznosemiconductorlayerforactivematrixaddressing
AT yakhakhlou thinfilmtransistorswithingaznosemiconductorlayerforactivematrixaddressing
AT agsmirnov thinfilmtransistorswithingaznosemiconductorlayerforactivematrixaddressing
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