THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING

THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING

The paper presents the results of a study of thin-film transistors based on the InGaZnO semiconductor compound (IGZO) for active-matrix displays addressing formed by magnetron plasma-chemical deposition. Their structural-morphological and electrophysical properties are investigated. Carrier mobility...

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Bibliographic Details
Main Authors: B. A. Kazarkin, A. A. Stepanov, Y. U. Mukha, I. I. Zakharchenia, Y. A. Khakhlou, A. G. Smirnov
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-12-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
indium-gallium-zinc oxide
transparent conducting layers
display technology
Online Access:https://doklady.bsuir.by/jour/article/view/2158

Internet

https://doklady.bsuir.by/jour/article/view/2158

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