Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation

Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation

<p>Abstract</p><p>Details of Berkovich nanoindentation-induced mechanical deformation mechanisms of single-crystal Si(100) and the metal-organic chemical-vapor deposition (MOCVD) derived GaN thin films have been systematic investigated by means of micro-Raman spectroscopy and cross...

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Bibliographic Details
Main Author: Jian Sheng-Rui
Format: Article
Language:English
Published: SpringerOpen 2007-01-01
Series:Nanoscale Research Letters
Subjects:
Si
GaN
Nanoindentation
Micro-Raman spectroscopy
Focused ion beam
Cross-sectional transmission electron microscopy
Online Access:http://dx.doi.org/10.1007/s11671-007-9106-0

Internet

http://dx.doi.org/10.1007/s11671-007-9106-0

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