An atomic carbon source for high temperature molecular beam epitaxy of graphene

An atomic carbon source for high temperature molecular beam epitaxy of graphene

Abstract We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule...

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Bibliographic Details
Main Authors: J. D. Albar, A. Summerfield, T. S. Cheng, A. Davies, E. F. Smith, A. N. Khlobystov, C. J. Mellor, T. Taniguchi, K. Watanabe, C. T. Foxon, L. Eaves, P. H. Beton, S. V. Novikov
Format: Article
Language:English
Published: Nature Publishing Group 2017-07-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-07021-1

Internet

https://doi.org/10.1038/s41598-017-07021-1

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