Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5×1017 cm−3, they...

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Bibliographic Details
Main Authors: Y. J. Ma, Y. G. Zhang, Y. Gu, S. P. Xi, X. Y. Chen, Baolai Liang, Bor-Chau Juang, Diana L. Huffaker, B. Du, X. M. Shao, J. X. Fang
Format: Article
Language:English
Published: AIP Publishing LLC 2017-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4989884

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http://dx.doi.org/10.1063/1.4989884

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