Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

In this study, the negative DIBL (N-DIBL), negative differential resistance (NDR), and Miller effect of a negative capacitance nanowire filed-effect-transistor (negative capacitance (NC) NWFET) were analyzed by employing the custom-built SPICE model. In the simulation, the minimum subthreshold swing...

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Bibliographic Details
Main Authors: Weixing Huang, Huilong Zhu, Zhenhua Wu, Xiaogen Yin, Qiang Huo, Kunpeng Jia, Yangyang Li, Yongkui Zhang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9163417/