Development of Efficient High Power Amplifier With More Than an Octave Bandwidth
This paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis. A novel procedure is developed to optimize the impedance values and synthesiz...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8246504/ |