Analysis of Various Pickup Coil Designs in Nonmodule-Type GaN Power Semiconductors

Gallium nitride (GaN) devices are advantageous over conventional Silicon (Si) devices in terms of their small size, low on-resistance, and high dv/dt characteristics; these ensure a high integrated density circuit configuration, high efficiency, and fast switching speed. Therefore, in the diagnosis...

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Bibliographic Details
Main Authors: Ui-Jin Kim, Rae-Young Kim
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Sensors
Subjects:
GaN
Online Access:https://www.mdpi.com/1424-8220/20/21/6066