Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/s...

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Bibliographic Details
Main Authors: D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, C. W. Liu, T. M. Lu
Format: Article
Language:English
Published: AIP Publishing LLC 2015-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4933026

Internet

http://dx.doi.org/10.1063/1.4933026

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