Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al₂O₃ Gate Stack

Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al₂O₃ Gate Stack

We have examined impacts of gate insulator (Al<sub>2</sub>O<sub>3</sub> or HfO<sub>2</sub>) and gate electrode (TiN or W) on electrical performance of ZnSnO/Si bilayer tunneling field-effect transistors (TFETs). It is found from the capacitance-voltage (C-V) chara...

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Bibliographic Details
Main Authors: Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Takahiro Mori, Yukinori Morita, Takashi Matsukawa, Mitsuru Takenaka, Shinichi Takagi
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Bilayer
gate stack
TFET
sub-threshold
ZnSnO
Online Access:https://ieeexplore.ieee.org/document/9044320/

Internet

https://ieeexplore.ieee.org/document/9044320/

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