Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

The low-frequency noise of planar transistors with ferroelectric Si-doped HfO2 as a gate dielectric is investigated and compared with that of undoped HfO2 reference devices. Predominantly 1/f-like spectra have been observed, which are governed by carrier number fluctuations or trapping in the gate s...

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Bibliographic Details
Main Authors: E. Simoen, B. J. O’Sullivan, N. Ronchi, G. Van den Bosch, D. Linten, J. Van Houdt
Format: Article
Language:English
Published: AIP Publishing LLC 2021-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0029833
Description
Summary:The low-frequency noise of planar transistors with ferroelectric Si-doped HfO2 as a gate dielectric is investigated and compared with that of undoped HfO2 reference devices. Predominantly 1/f-like spectra have been observed, which are governed by carrier number fluctuations or trapping in the gate stack. The corresponding noise power spectral density is about a factor of three higher for the reference devices, indicating that Si-doping reduces in a way similar to the trap density in the HfO2 layer.
ISSN:2158-3226

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