Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric
The low-frequency noise of planar transistors with ferroelectric Si-doped HfO2 as a gate dielectric is investigated and compared with that of undoped HfO2 reference devices. Predominantly 1/f-like spectra have been observed, which are governed by carrier number fluctuations or trapping in the gate s...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0029833 |