Switching Time Delay Optimization for “SiC+Si” Hybrid Device in a Phase-Leg Configuration
Compared to SiC MOSFET, the switching loss of Si IGBT is much higher due to its slow switching speed and tail current. Si IGBT/SiC MOSFET hybrid switch device can reach to optimal performance with low static and dynamic loss, which can improve the current capacity of SiC devices and reduce the power...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9339907/ |