III–V Nanowires: Synthesis, Property Manipulations, and Device Applications
III–V semiconductor nanowire (NW) materials possess a combination of fascinating properties, including their tunable direct bandgap, high carrier mobility, excellent mechanical flexibility, and extraordinarily large surface-to-volume ratio, making them superior candidates for next generation electro...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2014-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2014/702859 |