Tunnel electroresistance through organic ferroelectrics
Ferroelectric organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. Here, Tian et al. use poly(vinylidene fluoride) with 1–2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperatur...
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Bibliographic Details
| Main Authors: |
B. B. Tian,
J. L. Wang,
S. Fusil,
Y. Liu,
X. L. Zhao,
S. Sun,
H. Shen,
T. Lin,
J. L. Sun,
C. G. Duan,
M. Bibes,
A. Barthélémy,
B. Dkhil,
V. Garcia,
X. J. Meng,
J. H. Chu |
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| Format: | Article
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| Language: | English |
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| Published: |
Nature Publishing Group
2016-05-01
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| Series: | Nature Communications
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| Online Access: | https://doi.org/10.1038/ncomms11502
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