Tunnel electroresistance through organic ferroelectrics

Tunnel electroresistance through organic ferroelectrics

Ferroelectric organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. Here, Tian et al. use poly(vinylidene fluoride) with 1–2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperatur...

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Bibliographic Details
Main Authors: B. B. Tian, J. L. Wang, S. Fusil, Y. Liu, X. L. Zhao, S. Sun, H. Shen, T. Lin, J. L. Sun, C. G. Duan, M. Bibes, A. Barthélémy, B. Dkhil, V. Garcia, X. J. Meng, J. H. Chu
Format: Article
Language:English
Published: Nature Publishing Group 2016-05-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms11502

Internet

https://doi.org/10.1038/ncomms11502

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