Analysis and Suppression of High Speed Dv/Dt Induced False Turn-on in GaN HEMT Phase-Leg Topology

Analysis and Suppression of High Speed Dv/Dt Induced False Turn-on in GaN HEMT Phase-Leg Topology

Gallium nitride high electron mobility transistor (GaN HEMT) is liable to gate false turn-on problem when the gate crosstalk voltage exceeds its threshold voltage in the widely adopted phase-leg topology due to its low threshold voltage and high switching speed. Without considering the gate loop str...

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Bibliographic Details
Main Authors: Xiao Long, Zhao Jun, Li Pu, Dongdong Chen, Wu Liang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
GaN HEMT
false turn-on
analytical method
behavior model
optimal design
Online Access:https://ieeexplore.ieee.org/document/9381275/

Internet

https://ieeexplore.ieee.org/document/9381275/

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