Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor

Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor

Abstract The Laser Chemical Vapour Precipitation (L-CVP) of Si3N4 powders from mixtures of halogenated silanes and NH3 has been studied. The reactant gases were mixed at varying position in the laser beam, thus preventing low temperature react...

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Main Authors: R. A. Bauer, F. E. Kruis, P. van der Put, B. Scarlett, J. Schoonman
Format: Article
Language:English
Published: Hosokawa Powder Technology Foundation 2014-06-01
Series:KONA Powder and Particle Journal
Online Access:https://www.jstage.jst.go.jp/article/kona/8/0/8_1990022/_pdf/-char/en
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spelling doaj-2d69fdec635e4c8887976888ae3811542021-02-03T01:32:00ZengHosokawa Powder Technology FoundationKONA Powder and Particle Journal0288-45342187-55372014-06-018014515410.14356/kona.1990022konaChemical Vapour Precipitation of Silicon Nitride Powders in a Laser ReactorR. A. Bauer0F. E. Kruis1P. van der Put2B. Scarlett3J. Schoonman4Faculty of Chemical Technology and Materials Science, Delft University of TechnologyFaculty of Chemical Technology and Materials Science, Delft University of TechnologyFaculty of Chemical Technology and Materials Science, Delft University of TechnologyFaculty of Chemical Technology and Materials Science, Delft University of TechnologyFaculty of Chemical Technology and Materials Science, Delft University of TechnologyAbstract The Laser Chemical Vapour Precipitation (L-CVP) of Si3N4 powders from mixtures of halogenated silanes and NH3 has been studied. The reactant gases were mixed at varying position in the laser beam, thus preventing low temperature reactions. The Si3N4 was collected and separated from the waste product, NH4Cl, by electrostatic precipitation. A major problem in utilizing SiHCl3 and SiCl4 is their poor absorption of radiation from CO2-lasers. SF6 and SiF4 have been explored for possible use as an inert sensitizer. Silicon can be prepared from SiH2Cl2 without the use of a sensitizer. The diameter of the Si3N4 particles is typically between 15nm and 110nm dependent on the process conditions.https://www.jstage.jst.go.jp/article/kona/8/0/8_1990022/_pdf/-char/en
collection DOAJ
language English
format Article
sources DOAJ
author R. A. Bauer
F. E. Kruis
P. van der Put
B. Scarlett
J. Schoonman
spellingShingle R. A. Bauer
F. E. Kruis
P. van der Put
B. Scarlett
J. Schoonman
Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor
KONA Powder and Particle Journal
author_facet R. A. Bauer
F. E. Kruis
P. van der Put
B. Scarlett
J. Schoonman
author_sort R. A. Bauer
title Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor
title_short Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor
title_full Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor
title_fullStr Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor
title_full_unstemmed Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor
title_sort chemical vapour precipitation of silicon nitride powders in a laser reactor
publisher Hosokawa Powder Technology Foundation
series KONA Powder and Particle Journal
issn 0288-4534
2187-5537
publishDate 2014-06-01
description Abstract The Laser Chemical Vapour Precipitation (L-CVP) of Si3N4 powders from mixtures of halogenated silanes and NH3 has been studied. The reactant gases were mixed at varying position in the laser beam, thus preventing low temperature reactions. The Si3N4 was collected and separated from the waste product, NH4Cl, by electrostatic precipitation. A major problem in utilizing SiHCl3 and SiCl4 is their poor absorption of radiation from CO2-lasers. SF6 and SiF4 have been explored for possible use as an inert sensitizer. Silicon can be prepared from SiH2Cl2 without the use of a sensitizer. The diameter of the Si3N4 particles is typically between 15nm and 110nm dependent on the process conditions.
url https://www.jstage.jst.go.jp/article/kona/8/0/8_1990022/_pdf/-char/en
work_keys_str_mv AT rabauer chemicalvapourprecipitationofsiliconnitridepowdersinalaserreactor
AT fekruis chemicalvapourprecipitationofsiliconnitridepowdersinalaserreactor
AT pvanderput chemicalvapourprecipitationofsiliconnitridepowdersinalaserreactor
AT bscarlett chemicalvapourprecipitationofsiliconnitridepowdersinalaserreactor
AT jschoonman chemicalvapourprecipitationofsiliconnitridepowdersinalaserreactor
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