Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs
This work primarily focuses on the degradation degree of bulk current (<i>I<sub>B</sub></i>) for 28 nm stacked high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs), sensed and stressed with the channel-hot-carrier test and the drain-avalanche-hot...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-12-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/12/2095 |