A two-dimensional analytical model for short channel junctionless double-gate MOSFETs
A physics-based analytical model of electrostatic potential for short-channel junctionless double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in which the full two-dimensional (2-D) Poisson’s equation is solved in channel region by a method of series expansion similar to...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4921086 |