Influence of rf sputter power on ZnO film characteristics for transparent memristor devices
The impact of the radio-frequency (rf) sputtering power on the switching characteristics of ZnO-based transparent memristor devices has been investigated. Memristor devices made with a high rf power exhibited excellent switching characteristics; meanwhile, decreasing the rf power led to less-apparen...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5125665 |