Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Multilevel storage and the continuing scaling down of technology have significantly improved the storage density of phase change memory, but have also brought about a challenge, in that data reliability can degrade due to the resistance drift. To ensure data reliability, many read and write operatio...

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Bibliographic Details
Main Authors: Yi Lv, Qian Wang, Houpeng Chen, Chenchen Xie, Shenglan Ni, Xi Li, Zhitang Song
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/12/9/1085