Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

<p>Abstract</p> <p>We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the dens...

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Bibliographic Details
Main Authors: Frigeri C, Bietti S, Somaschini C, Koguchi N, Sanguinetti S
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Nanotechnology
Molecular beam epitaxy
Droplet epitaxy
Integration of III&#8211;V on Si
Local artificial substrate
Online Access:http://dx.doi.org/10.1007/s11671-010-9760-5

Internet

http://dx.doi.org/10.1007/s11671-010-9760-5

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