Improvement of thermal stability of Ta-N film in Cu metallization by a Zr-Si interlayer
Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatures in a rf magnetron sputtering system, followed by in situ deposition of Cu. The Cu/Ta-N/Zr/Si samples were subjected to thermal annealing up to 800 ℃ under the protection of pure nitrogen gas. In or...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2021-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2021/47/e3sconf_icepe2021_04015.pdf |