The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular beam epitaxy. The contact layer was prepared...

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Bibliographic Details
Main Authors: Florent Ravaux, Irfan Saadat, Mustapha Jouiad
Format: Article
Language:English
Published: MDPI AG 2017-06-01
Series:Crystals
Subjects:
III-V materials
digital etch
low contact resistance
HRTEM
EELS
Online Access:http://www.mdpi.com/2073-4352/7/6/177
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spelling doaj-2a8741f6cba34a4c980eea7d568b2d0b2020-11-24T23:37:55ZengMDPI AGCrystals2073-43522017-06-017617710.3390/cryst7060177cryst7060177The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal ContactsFlorent Ravaux0Irfan Saadat1Mustapha Jouiad2Department of Mechanical & Materials Science and Electrical Engineering & Computer Science, Masdar Institute of Science and Technology, A part of Khalifa University of Science and Technology, P.O. Box 54224, Abu Dhabi 54224, UAEDepartment of Mechanical & Materials Science and Electrical Engineering & Computer Science, Masdar Institute of Science and Technology, A part of Khalifa University of Science and Technology, P.O. Box 54224, Abu Dhabi 54224, UAEDepartment of Mechanical & Materials Science and Electrical Engineering & Computer Science, Masdar Institute of Science and Technology, A part of Khalifa University of Science and Technology, P.O. Box 54224, Abu Dhabi 54224, UAETo achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM) investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS) showed that the amount of oxides (InxOy, GaxOy or AsxOy) was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.http://www.mdpi.com/2073-4352/7/6/177III-V materialsdigital etchlow contact resistanceHRTEMEELS
collection DOAJ
language English
format Article
sources DOAJ
author Florent Ravaux
Irfan Saadat
Mustapha Jouiad
spellingShingle Florent Ravaux
Irfan Saadat
Mustapha Jouiad
The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts
Crystals
III-V materials
digital etch
low contact resistance
HRTEM
EELS
author_facet Florent Ravaux
Irfan Saadat
Mustapha Jouiad
author_sort Florent Ravaux
title The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts
title_short The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts
title_full The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts
title_fullStr The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts
title_full_unstemmed The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts
title_sort role of iii-v substrate roughness and deoxidation induced by digital etch in achieving low resistance metal contacts
publisher MDPI AG
series Crystals
issn 2073-4352
publishDate 2017-06-01
description To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM) investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS) showed that the amount of oxides (InxOy, GaxOy or AsxOy) was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.
topic III-V materials
digital etch
low contact resistance
HRTEM
EELS
url http://www.mdpi.com/2073-4352/7/6/177
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