The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts
To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular beam epitaxy. The contact layer was prepared...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-06-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2073-4352/7/6/177 |