Silicon Photomultipliers With Area Up to 9 mm<sup>2</sup> in a 0.35-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula>m CMOS Process
Silicon photomultipliers produced using standard complementary metal oxide semiconductor (CMOS) processes are at the basis of modern applications of sensors for weak photon fluxes. They allow in fact to integrate transistor-based electronic components within sensors and provide intelligent read-out...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8616846/ |