Novel 1064 nm DBR lasers combining active layer removal and surface gratings
Abstract The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections where no current is injected. The DB...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12192 |