Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Silicon oxynitride films are one kind of important gate dielectric materials for applications in the fabrication of silicon CMOS integrated circuits (ICs), which have been widely and deeply studied. However, with the significant demand of the technologies for Si-based monolithic optoelectronic ICs,...

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Bibliographic Details
Main Authors: Kunji Chen, Zewen Lin, Pengzhan Zhang, Rui Huang, Hengping Dong, Xinfan Huang
Format: Article
Language:English
Published: Frontiers Media S.A. 2019-10-01
Series:Frontiers in Physics
Subjects:
amorphous silicon oxynitride (a-SiNxOy)
PL mechanism
band tail model
N-Si-O bond defect model
a-SiNxOy LED
Online Access:https://www.frontiersin.org/article/10.3389/fphy.2019.00144/full

Internet

https://www.frontiersin.org/article/10.3389/fphy.2019.00144/full

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