Simple and Efficient AlN-Based Piezoelectric Energy Harvesters
In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficie...
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MDPI AG
2020-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/2/143 |
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doaj-294d8ff317844936b2ffd808b7af24132020-11-25T02:33:37ZengMDPI AGMicromachines2072-666X2020-01-0111214310.3390/mi11020143mi11020143Simple and Efficient AlN-Based Piezoelectric Energy HarvestersImrich Gablech0Jaroslav Klempa1Jan Pekárek2Petr Vyroubal3Jan Hrabina4Miroslava Holá5Jan Kunz6Jan Brodský7Pavel Neužil8Central European Institute of Technology, Brno University of Technology, CZ-61600 Brno, Czech RepublicCentral European Institute of Technology, Brno University of Technology, CZ-61600 Brno, Czech RepublicCentral European Institute of Technology, Brno University of Technology, CZ-61600 Brno, Czech RepublicDepartment of Electrical and Electronic Technology, Faculty of Electrical Engineering and Communication, Brno University of Technology, CZ-61600 Brno, Czech RepublicInstitute of Scientific Instruments, Czech Academy of Sciences, CZ-61264 Brno, Czech RepublicInstitute of Scientific Instruments, Czech Academy of Sciences, CZ-61264 Brno, Czech RepublicDepartment of Control and Instrumentations, Faculty of Electrical Engineering and Communication, Brno University of Technology, CZ-61600 Brno, Czech RepublicCentral European Institute of Technology, Brno University of Technology, CZ-61600 Brno, Czech RepublicDepartment of Microsystem Engineering, School of Mechanical Engineering, Northwestern Polytechnical University, Xi’an 710072, ChinaIn this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients <i>d</i><sub>33</sub> of (7.33 ± 0.08) pC∙N<sup>−1</sup>. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.https://www.mdpi.com/2072-666X/11/2/143alnmicro-electro-mechanical systems (mems) cantilevercomplementary metal oxide semiconductor (cmos) compatibleenergy harvestinghigh performance |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Imrich Gablech Jaroslav Klempa Jan Pekárek Petr Vyroubal Jan Hrabina Miroslava Holá Jan Kunz Jan Brodský Pavel Neužil |
| spellingShingle |
Imrich Gablech Jaroslav Klempa Jan Pekárek Petr Vyroubal Jan Hrabina Miroslava Holá Jan Kunz Jan Brodský Pavel Neužil Simple and Efficient AlN-Based Piezoelectric Energy Harvesters Micromachines aln micro-electro-mechanical systems (mems) cantilever complementary metal oxide semiconductor (cmos) compatible energy harvesting high performance |
| author_facet |
Imrich Gablech Jaroslav Klempa Jan Pekárek Petr Vyroubal Jan Hrabina Miroslava Holá Jan Kunz Jan Brodský Pavel Neužil |
| author_sort |
Imrich Gablech |
| title |
Simple and Efficient AlN-Based Piezoelectric Energy Harvesters |
| title_short |
Simple and Efficient AlN-Based Piezoelectric Energy Harvesters |
| title_full |
Simple and Efficient AlN-Based Piezoelectric Energy Harvesters |
| title_fullStr |
Simple and Efficient AlN-Based Piezoelectric Energy Harvesters |
| title_full_unstemmed |
Simple and Efficient AlN-Based Piezoelectric Energy Harvesters |
| title_sort |
simple and efficient aln-based piezoelectric energy harvesters |
| publisher |
MDPI AG |
| series |
Micromachines |
| issn |
2072-666X |
| publishDate |
2020-01-01 |
| description |
In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients <i>d</i><sub>33</sub> of (7.33 ± 0.08) pC∙N<sup>−1</sup>. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters. |
| topic |
aln micro-electro-mechanical systems (mems) cantilever complementary metal oxide semiconductor (cmos) compatible energy harvesting high performance |
| url |
https://www.mdpi.com/2072-666X/11/2/143 |
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