Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors
High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron mic...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-08-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4961878 |