Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors

Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors

Herein, we investigated the effects of active layer thickness (<i>t<sub>S</sub></i>) on the electrical characteristics and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). IGTO TFTs, with <i>t<sub>S</sub></i> val...

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Bibliographic Details
Main Authors: Dae-Hwan Kim, Hyun-Seok Cha, Hwan-Seok Jeong, Seong-Hyun Hwang, Hyuck-In Kwon
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Electronics
Subjects:
IGTO TFT
active layer thickness
positive bias stress stability
negative bias illumination stress stability
Online Access:https://www.mdpi.com/2079-9292/10/11/1295

Internet

https://www.mdpi.com/2079-9292/10/11/1295

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