Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs
Abstract Improving the power conversion efficiency of vertical cavity surface‐emitting lasers (VCSELs) by three‐dimensionally control of the carrier concentration, which is the main mechanism of the electrical resistance and optical absorption has been investigated using the proton implantation tech...
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| Format: | Article |
| Language: | English |
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Wiley
2021-07-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12198 |
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doaj-2901c5e7eff449808908694b189d32f62021-07-16T16:54:07ZengWileyElectronics Letters0013-51941350-911X2021-07-01571558758810.1049/ell2.12198Proton implantation in just above active region for improvement of power conversion efficiency of VCSELsTomoyuki Miyamoto0Hayato Sakamoto1FIRST, Institute of Innovative Research Tokyo Institute of Technology Yokohama JapanFIRST, Institute of Innovative Research Tokyo Institute of Technology Yokohama JapanAbstract Improving the power conversion efficiency of vertical cavity surface‐emitting lasers (VCSELs) by three‐dimensionally control of the carrier concentration, which is the main mechanism of the electrical resistance and optical absorption has been investigated using the proton implantation technique just above the active region. The fabricated VCSELs showed improved power conversion efficiency of approximately 3 points without serious deterioration of threshold current and operating voltage. Improvement of slope efficiency from 0.5 W/A to 0.6 W/A is the main cause and these improved the output power by 1.2 times.https://doi.org/10.1049/ell2.12198 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Tomoyuki Miyamoto Hayato Sakamoto |
| spellingShingle |
Tomoyuki Miyamoto Hayato Sakamoto Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs Electronics Letters |
| author_facet |
Tomoyuki Miyamoto Hayato Sakamoto |
| author_sort |
Tomoyuki Miyamoto |
| title |
Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs |
| title_short |
Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs |
| title_full |
Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs |
| title_fullStr |
Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs |
| title_full_unstemmed |
Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs |
| title_sort |
proton implantation in just above active region for improvement of power conversion efficiency of vcsels |
| publisher |
Wiley |
| series |
Electronics Letters |
| issn |
0013-5194 1350-911X |
| publishDate |
2021-07-01 |
| description |
Abstract Improving the power conversion efficiency of vertical cavity surface‐emitting lasers (VCSELs) by three‐dimensionally control of the carrier concentration, which is the main mechanism of the electrical resistance and optical absorption has been investigated using the proton implantation technique just above the active region. The fabricated VCSELs showed improved power conversion efficiency of approximately 3 points without serious deterioration of threshold current and operating voltage. Improvement of slope efficiency from 0.5 W/A to 0.6 W/A is the main cause and these improved the output power by 1.2 times. |
| url |
https://doi.org/10.1049/ell2.12198 |
| work_keys_str_mv |
AT tomoyukimiyamoto protonimplantationinjustaboveactiveregionforimprovementofpowerconversionefficiencyofvcsels AT hayatosakamoto protonimplantationinjustaboveactiveregionforimprovementofpowerconversionefficiencyofvcsels |
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