Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs
Abstract Improving the power conversion efficiency of vertical cavity surface‐emitting lasers (VCSELs) by three‐dimensionally control of the carrier concentration, which is the main mechanism of the electrical resistance and optical absorption has been investigated using the proton implantation tech...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12198 |