Investigation of SiN<sub><italic>x</italic></sub> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Investigation of SiN<sub><italic>x</italic></sub> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiN<sub>x</sub> and monocrystal-like AlN. The effects of interface traps and polarization charges on current collapse are investigated by TCAD...

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Bibliographic Details
Main Authors: Song Yang, Zhikai Tang, Mengyuan Hua, Zhaofu Zhang, Jin Wei, Yunyou Lu, Kevin J. Chen
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN-cap/AlGaN/GaN HEMTs
dynamicon-resistance
TCAD
passivation
SiN<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">ₓ</italic>
AlN
Online Access:https://ieeexplore.ieee.org/document/9050645/

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https://ieeexplore.ieee.org/document/9050645/

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