Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation
The photoconductivity of amorphous As2S8 chalcogenide film under the irradiation of bandgap light is investigated. In the temperature range 300–350 K, the dark conductivity and photoconductivity of the annealed As2S8 film increase with the temperature, and the dependence of the both on temperature s...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-06-01
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| Series: | AIP Advances |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4811243 |