Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells

This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and tr...

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Main Authors: Marquis Crose, Anh Tran, Panagiotis D. Christofides
Format: Article
Language:English
Published: MDPI AG 2017-02-01
Series:Coatings
Subjects:
Online Access:http://www.mdpi.com/2079-6412/7/2/22
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spelling doaj-265cd9d6bd5f42a5a2ff5721161163e52020-11-24T23:19:49ZengMDPI AGCoatings2079-64122017-02-01722210.3390/coatings7020022coatings7020022Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar CellsMarquis Crose0Anh Tran1Panagiotis D. Christofides2Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095, USADepartment of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095, USADepartment of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095, USAThis work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactions that take place on the surface of a-Si:H thin films are coupled with the CFD simulation using a novel kinetic Monte Carlo scheme which describes the thin film growth, leading to a multiscale CFD model. Due to the significant computational challenges imposed by this multiscale CFD model, a parallel computation strategy is presented which allows for reduced processing time via the discretization of both the gas-phase mesh and microscopic thin film growth processes. Finally, the multiscale CFD model has been applied to the PECVD process at industrially relevant operating conditions revealing non-uniformities greater than 20% in the growth rate of amorphous silicon films across the radius of the wafer.http://www.mdpi.com/2079-6412/7/2/22multiscale modelingplasma-enhanced chemical vapor depositioncomputational fluid dynamicsthin film solar cellsparallel computing
collection DOAJ
language English
format Article
sources DOAJ
author Marquis Crose
Anh Tran
Panagiotis D. Christofides
spellingShingle Marquis Crose
Anh Tran
Panagiotis D. Christofides
Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells
Coatings
multiscale modeling
plasma-enhanced chemical vapor deposition
computational fluid dynamics
thin film solar cells
parallel computing
author_facet Marquis Crose
Anh Tran
Panagiotis D. Christofides
author_sort Marquis Crose
title Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells
title_short Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells
title_full Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells
title_fullStr Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells
title_full_unstemmed Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells
title_sort multiscale computational fluid dynamics: methodology and application to pecvd of thin film solar cells
publisher MDPI AG
series Coatings
issn 2079-6412
publishDate 2017-02-01
description This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactions that take place on the surface of a-Si:H thin films are coupled with the CFD simulation using a novel kinetic Monte Carlo scheme which describes the thin film growth, leading to a multiscale CFD model. Due to the significant computational challenges imposed by this multiscale CFD model, a parallel computation strategy is presented which allows for reduced processing time via the discretization of both the gas-phase mesh and microscopic thin film growth processes. Finally, the multiscale CFD model has been applied to the PECVD process at industrially relevant operating conditions revealing non-uniformities greater than 20% in the growth rate of amorphous silicon films across the radius of the wafer.
topic multiscale modeling
plasma-enhanced chemical vapor deposition
computational fluid dynamics
thin film solar cells
parallel computing
url http://www.mdpi.com/2079-6412/7/2/22
work_keys_str_mv AT marquiscrose multiscalecomputationalfluiddynamicsmethodologyandapplicationtopecvdofthinfilmsolarcells
AT anhtran multiscalecomputationalfluiddynamicsmethodologyandapplicationtopecvdofthinfilmsolarcells
AT panagiotisdchristofides multiscalecomputationalfluiddynamicsmethodologyandapplicationtopecvdofthinfilmsolarcells
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