Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells
This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and tr...
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Online Access: | http://www.mdpi.com/2079-6412/7/2/22 |
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doaj-265cd9d6bd5f42a5a2ff5721161163e52020-11-24T23:19:49ZengMDPI AGCoatings2079-64122017-02-01722210.3390/coatings7020022coatings7020022Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar CellsMarquis Crose0Anh Tran1Panagiotis D. Christofides2Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095, USADepartment of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095, USADepartment of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095, USAThis work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactions that take place on the surface of a-Si:H thin films are coupled with the CFD simulation using a novel kinetic Monte Carlo scheme which describes the thin film growth, leading to a multiscale CFD model. Due to the significant computational challenges imposed by this multiscale CFD model, a parallel computation strategy is presented which allows for reduced processing time via the discretization of both the gas-phase mesh and microscopic thin film growth processes. Finally, the multiscale CFD model has been applied to the PECVD process at industrially relevant operating conditions revealing non-uniformities greater than 20% in the growth rate of amorphous silicon films across the radius of the wafer.http://www.mdpi.com/2079-6412/7/2/22multiscale modelingplasma-enhanced chemical vapor depositioncomputational fluid dynamicsthin film solar cellsparallel computing |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Marquis Crose Anh Tran Panagiotis D. Christofides |
spellingShingle |
Marquis Crose Anh Tran Panagiotis D. Christofides Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells Coatings multiscale modeling plasma-enhanced chemical vapor deposition computational fluid dynamics thin film solar cells parallel computing |
author_facet |
Marquis Crose Anh Tran Panagiotis D. Christofides |
author_sort |
Marquis Crose |
title |
Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells |
title_short |
Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells |
title_full |
Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells |
title_fullStr |
Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells |
title_full_unstemmed |
Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells |
title_sort |
multiscale computational fluid dynamics: methodology and application to pecvd of thin film solar cells |
publisher |
MDPI AG |
series |
Coatings |
issn |
2079-6412 |
publishDate |
2017-02-01 |
description |
This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactions that take place on the surface of a-Si:H thin films are coupled with the CFD simulation using a novel kinetic Monte Carlo scheme which describes the thin film growth, leading to a multiscale CFD model. Due to the significant computational challenges imposed by this multiscale CFD model, a parallel computation strategy is presented which allows for reduced processing time via the discretization of both the gas-phase mesh and microscopic thin film growth processes. Finally, the multiscale CFD model has been applied to the PECVD process at industrially relevant operating conditions revealing non-uniformities greater than 20% in the growth rate of amorphous silicon films across the radius of the wafer. |
topic |
multiscale modeling plasma-enhanced chemical vapor deposition computational fluid dynamics thin film solar cells parallel computing |
url |
http://www.mdpi.com/2079-6412/7/2/22 |
work_keys_str_mv |
AT marquiscrose multiscalecomputationalfluiddynamicsmethodologyandapplicationtopecvdofthinfilmsolarcells AT anhtran multiscalecomputationalfluiddynamicsmethodologyandapplicationtopecvdofthinfilmsolarcells AT panagiotisdchristofides multiscalecomputationalfluiddynamicsmethodologyandapplicationtopecvdofthinfilmsolarcells |
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1725576623806218240 |